| Title | Graphene charge-injection photodetectors |
| Authors | Liu, Wei Lv, Jianhang Peng, Li Guo, Hongwei Liu, Chen Liu, Yilun Li, Wei Li, Lingfei Liu, Lixiang Wang, Peiqi Bodepudi, Srikrishna Chanakya Shehzad, Khurram Hu, Guohua Liu, Kaihui Sun, Zhipei Hasan, Tawfique Xu, Yang Wang, Xiaomu Gao, Chao Bin Yu Duan, Xiangfeng |
| Affiliation | Zhejiang Univ, ZJU UIUC Joint Inst, Sch Micronano Elect, State Key Lab Silicon Mat,ZJU Hangzhou Global Sci, Hangzhou, Peoples R China Zhejiang Univ, Dept Polymer Sci & Engn, MOE Key Lab Macromol Synth & Functionalizat, Key Lab Adsorpt & Separat Mat & Technol Zhejiang, Hangzhou, Peoples R China Univ Calif Los Angeles, Dept Chem & Biochem, Calif Nanosyst Inst, 405 Hilgard Ave, Los Angeles, CA 90024 USA Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Peoples R China Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China Aalto Univ, Dept Elect & Nanoengn, Espoo, Finland Aalto Univ, Dept Appl Phys, Espoo, Finland Univ Cambridge, Cambridge Graphene Ctr, Cambridge, England Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China |
| Keywords | BROAD-BAND CMOS CCD TRANSPORT SENSOR |
| Issue Date | May-2022 |
| Publisher | NATURE ELECTRONICS |
| Abstract | Photodetectors that offer broadband imaging from ultraviolet to mid-infrared can be created by using a silicon depletion well for charge integration, single-layer graphene for non-destructive direct readout and multilayer graphene for infrared photocharge injection. Charge-coupled devices are widely used imaging technologies. However, their speed is limited due to the complex readout process, which involves sequential charge transfer between wells, and their spectral bandwidth is limited due to the absorption limitations of silicon. Here we report graphene charge-injection photodetectors. The devices have a deep-depletion silicon well for charge integration, single-layer graphene for non-destructive direct readout and multilayer graphene for infrared photocharge injection. The photodetectors offer broadband imaging from ultraviolet (around 375 nm) to mid-infrared (around 3.8 mu m), a conversion gain of 700 pA per electron, a responsivity above 0.1 A W-1 in the infrared region and a fast response time under 1 mu s. |
| URI | http://hdl.handle.net/20.500.11897/642908 |
| ISSN | 2520-1131 |
| DOI | 10.1038/s41928-022-00755-5 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
