| Title | MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation |
| Authors | Zhang, Bing Hu, Congzhen Xin, Youze Li, Yaoxin Guo, Zhuoqi Xue, Zhongming Dong, Li Yu, Shanzhe Wang, Xiaofei Lei, Shuyu Geng, Li |
| Affiliation | Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China Key Lab Micronano Elect & Syst Integrat Xian City, Xian 710049, Peoples R China Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China ABAX Sensing Inc, Ningbo 315500, Peoples R China |
| Keywords | PINNED PHOTODIODE CHARGE-TRANSFER WELL CAPACITY CCD |
| Issue Date | 1-Apr-2022 |
| Publisher | CHINESE PHYSICS B |
| Abstract | By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer, and storage in the four-transistor active pixel sensor (4T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes (PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates (TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion (FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 mu m test pixel designed in 0.11 mu m CIS process. |
| URI | http://hdl.handle.net/20.500.11897/642748 |
| ISSN | 1674-1056 |
| DOI | 10.1088/1674-1056/ac3819 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息科学技术学院 |
