| Title | Toward Direct Growth of Ultra-Flat Graphene |
| Authors | Jiang, Bei Liang, Dongdong Sun, Zhongti Ci, Haina Liu, Bingzhi Gao, Yaqi Shan, Jingyuan Yang, Xiaoqin Rummeli, Mark H. Wang, Junxi Wei, Tongbo Sun, Jingyu Liu, Zhongfan |
| Affiliation | Peking Univ, Ctr Nanochem, Beijing Sci & Engn Ctr Nanocarbons, Coll Chem & Mol Engn, Beijing 100871, Peoples R China Beijing Graphene Inst, Beijing 100095, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China Soochow Univ, Key Lab Adv Carbon Mat & Wearable Energy Technol, Light Ind Inst Electrochem Power Sources, Coll Energy,Soochow Inst Energy & Mat Innovat, Suzhou 215006, Peoples R China Leibniz Inst Solid State & Mat Res Dresden, POB 270116, D-01171 Dresden, Germany |
| Keywords | THERMAL-EXPANSION COEFFICIENT LARGE-AREA SINGLE-CRYSTAL |
| Issue Date | Apr-2022 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Abstract | The elimination of wrinkles has become a research hotspot in the realm of the chemical vapor deposition growth of graphene, and there have been reliable routes developed for the scenario of catalytic synthesis on metals. Nonetheless, the transfer-free growth of graphene over insulating substrates affording ultra-flatness remains a puzzle. Here, the authors report the direct preparation of ultra-flat graphene on an economical quartz glass substrate at a wafer level, without any wrinkles and metallic impurities, is reported. Density functional theory calculations are employed to establish that graphene adlayer is prone to generate in the presence of textured particulates. In parallel, a critical temperature regime (1443-1453 K), is identified within which graphene adlayer-restrained forming and substrate in-situ flattening could simultaneously occur. The thus-obtained graphene enables the atomically smooth growth of a GaN film with (001) single-crystallinity over the amorphous substrate. This technique is particularly attractive in the context of cost-effective integration of emerging III-nitrides toward exciting applications. |
| URI | http://hdl.handle.net/20.500.11897/642116 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.202200428 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ |
