Title Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously
Authors Li, Duo
Liu, Shangfeng
Qian, Zeyuan
Liu, Quanfeng
Zhou, Kang
Liu, Dandan
Sheng, Shanshan
Sheng, Bowen
Liu, Fang
Chen, Zhaoying
Wang, Ping
Wang, Tao
Rong, Xin
Tao, Renchun
Kang, Jianbin
Chen, Feiliang
Kang, Junjie
Yuan, Ye
Wang, Qi
Sun, Ming
Ge, Weikun
Shen, Bo
Tian, Pengfei
Wang, Xinqiang
Affiliation Peking Univ, Sch Phys, Ctr Nanooptoelect, State Key Lab Mesoscop Phys & Frontiers Sci, Beijing 100871, Peoples R China
Fudan Univ, Sch Informat Sci & Technol, Shanghai 200438, Peoples R China
Dongguan Sino Crystal Semicond Co Ltd, Dongguan 523500, Peoples R China
Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China
Songshan Lake Mat Lab, Dongguan 523808, Peoples R China
Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Peoples R China
Peking Univ, Sch Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China
Keywords LIGHT-EMITTING-DIODES
UV LEDS
REFRACTIVE-INDEX
ALGAN
ALXGA1-XN
DESIGN
Issue Date Apr-2022
Publisher ADVANCED MATERIALS
Abstract Deep-ultraviolet (DUV) solar-blind communication (SBC) shows distinct advantages of non-line-of-sight propagation and background noise negligibility over conventional visible-light communication. AlGaN-based DUV micro-light-emitting diodes (mu-LEDs) are an excellent candidate for a DUV-SBC light source due to their small size, low power consumption, and high modulation bandwidth. A long-haul DUV-SBC system requires the light source exhibiting high output power, high modulation bandwidth, and high rate, simultaneously. Such a device is rarely reported. A parallel-arrayed planar (PAP) approach is here proposed to satisfy those requirements. By reducing the dimensions of the active emission mesa to micrometer scale, DUV mu-LEDs with ultrahigh power density are created due to their homogeneous injection current and enhanced planar isotropic light emission. Interconnected PAP mu-LEDs with a diameter of 25 mu m are produced. This device has an output power of 83.5 mW with a density of 405 W cm(-2) at 230 mA, a wall-plug efficiency (WPE) of 4.7% at 155 mA, and a high -3 dB modulation bandwidth of 380 MHz. The remarkable high output power and efficiency make those devices a reliable platform to develop high-modulation-bandwidth wireless communication and to meet the requirements for bio-elimination.
URI http://hdl.handle.net/20.500.11897/642033
ISSN 0935-9648
DOI 10.1002/adma.202109765
Indexed EI
SCI(E)
Appears in Collections: 物理学院
人工微结构和介观物理国家重点实验室

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