Title Room-Temperature Ferroelectricity in 1T '-ReS2 Multilayers
Authors Wan, Yi
Hu, Ting
Mao, Xiaoyu
Fu, Jun
Yuan, Kai
Song, Yu
Gan, Xuetao
Xu, Xiaolong
Xue, Mingzhu
Cheng, Xing
Huang, Chengxi
Yang, Jinbo
Dai, Lun
Zeng, Hualing
Kan, Erjun
Affiliation Nanjing Univ Sci & Technol, MIIT Key Lab Semicond Microstruct & Quantum Sensi, Nanjing 210094, Peoples R China
Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Peoples R China
Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
Northwestern Polytech Univ, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Sch Sci, Xian 710072, Peoples R China
Northwestern Polytech Univ, Shaanxi Key Lab Opt Informat Technol, Sch Sci, Xian 710072, Peoples R China
Keywords INPLANE
SEMICONDUCTORS
ANISOTROPY
METALS
Issue Date 8-Feb-2022
Publisher PHYSICAL REVIEW LETTERS
Abstract van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T'-ReS2 multilayers via a combined study of theory and experiment. Room-temperature vertical ferroelectricity is observed in twodimensional 1T'-ReS2 with layer number N >= 2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T'-ReS2, the ferroelectric transition temperature is estimated to be similar to 405 K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic Scale ferroeletricity.
URI http://hdl.handle.net/20.500.11897/637990
ISSN 0031-9007
DOI 10.1103/PhysRevLett.128.067601
Indexed SCI(E)
Appears in Collections: 物理学院
人工微结构和介观物理国家重点实验室

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