| Title | Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates |
| Authors | Liu, Danshuo Hu, Lin Yang, Xuelin Zhang, Zhihong Yu, Haodong Zheng, Fawei Feng, Yuxia Wei, Jiaqi Cai, Zidong Chen, Zhenghao Ma, Cheng Xu, Fujun Wang, Xinqiang Ge, Weikun Liu, Kaihui Huang, Bing Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Minist Educ,Nanooptoelect Frontier Ctr, Beijing 100871, Peoples R China Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China Beijing Univ Technol, Coll Microelect, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China |
| Keywords | LAYER |
| Issue Date | Feb-2022 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Abstract | III-nitride semiconductor films are usually achieved by epitaxial growth on single-crystalline substrates (sapphire, silicon (Si), and silicon carbide). It is important to grow these films on non-epitaxial substrates of interest such as polycrystalline substrates for exploring novel applications in electronics and optoelectronics. However, single-crystalline III-nitride films with uniform orientation on non-epitaxial substrates have not yet been realized, due to the lack of crystallographic orientation of the substrates. Here, this work proposes a strategy of polarization-driven-orientation selective growth (OSG) and demonstrate that single-crystalline gallium nitride (GaN) can in principle be achieved on any substrates. Taking polycrystalline diamond and amorphous-silicon dioxide/Si substrates as typical examples, the OSG is demonstrated by utilizing a composed buffer layer consisting of graphene and polycrystalline physical vapor deposited (PVD) aluminium nitride (AlN). The polarization of the PVD AlN can effectively tune the strength of interfacial orbital coupling between AlN nuclei and graphene at different rotation angles, as confirmed by atom-scale first-principles calculations, and align the AlN nuclei to form a uniform orientation. This consequently leads to continuous single-crystalline GaN films. The ability to grow single-crystalline III-nitrides onto any desired substrates would create unprecedented opportunities for developing novel electronic and optoelectronic devices. |
| URI | http://hdl.handle.net/20.500.11897/637978 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.202113211 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
