Title | Cross-Scale Synthesis of Organic High-k Semiconductors Based on Spiro-Gridized Nanopolymers |
Authors | Lin, Dongqing Zhang, Wenhua Yin, Hang Hu, Haixia Li, Yang Zhang, He Wang, Le Xie, Xinmiao Hu, Hongkai Yan, Yongxia Ling, Haifeng Liu, Jin'an Qian, Yue Tang, Lei Wang, Yongxia Dong, Chaoyang Xie, Linghai Zhang, Hao Wang, Shasha Wei, Ying Guo, Xuefeng Lu, Dan Huang, Wei |
Affiliation | Nanjing Univ Posts & Telecommun, Ctr Mol Syst & Organ Devices CMSOD, State Key Lab Organ Elect & Informat Displays, 9 Wenyuan Rd, Nanjing 210023, Peoples R China Nanjing Univ Posts & Telecommun, Inst Adv Mat IAM, 9 Wenyuan Rd, Nanjing 210023, Peoples R China Univ Sci & Technol China, CAS Key Lab Soft Matter Chem, Anhui Prov Engn Lab Adv Funct Polymer Film, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Peking Univ, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn, Natl Biomed Imaging Ctr, Beijing 100871, Peoples R China Northwestern Polytech Univ, Frontiers Sci Ctr Flexible Elect FSCFE, MIIT Key Lab Flexible Elect KLoFE, Xian 710072, Peoples R China Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, 2699 Qianjin Ave, Changchun 130012, Peoples R China |
Keywords | TRANSPORT CONDUCTANCE MOBILITY ELEMENTS DESIGN |
Issue Date | 12-Jan-2022 |
Publisher | RESEARCH |
Abstract | High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piezoelectric, pyroelectric, and ferroelectric effects but also photoelectric conversion efficiency in OPVs, carrier mobility in OFETs, and charge density in charge-trapping memories. Herein, we report an ultralong persistence length (l(p) approximate to 41 nm) effect of spirofused organic nanopolymers on dielectric properties, together with excitonic and charge carrier behaviors. The state-of-the-art nanopolymers, namely, nanopolyspirogrids (NPSGs), are synthesized via the simple cross-scale Friedel-Crafts polygridization of A(2)B(2)-type nanomonomers. The high dielectric constant (k = 8.43) of NPSG is firstly achieved by locking spiro-polygridization effect that results in the enhancement of dipole polarization. When doping into a polystyrene-based dielectric layer, such a high-k feature of NPSG increases the field-effect carrier mobility from 0.20 to 0.90 cm(2) V-1 s(-1) in pentacene OFET devices. Meanwhile, amorphous NPSG film exhibits an ultralow energy disorder (<50 meV) for an excellent zero-field hole mobility of 3.94 x 10(-3) cm(2) V-1 s(-1), surpassing most of the amorphous pi-conjugated polymers. Organic nanopolymers with high dielectric constants open a new way to break through the bottleneck of efficiency and multifunctionality in the blueprint of the fourth-generation semiconductors. |
URI | http://hdl.handle.net/20.500.11897/637800 |
DOI | 10.34133/2022/9820585 |
Indexed | SCI(E) |
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