| Title | Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration |
| Authors | Liu, Fang Wang, Tao Zhang, Zhihong Shen, Tong Rong, Xin Sheng, Bowen Yang, Liuyun Li, Duo Wei, Jiaqi Sheng, Shanshan Li, Xingguang Chen, Zhaoying Tao, Renchun Yuan, Ye Yang, Xuelin Xu, Fujun Zhang, Jingmin Liu, Kaihui Li, Xin-Zheng Shen, Bo Wang, Xinqiang |
| Affiliation | Peking Univ, Sch Phys, Ctr Nanooptoelect, State Key Lab Mesoscop Phys & Frontiers Sci, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China Univ Sci & Technol Beijing, Inst Multidisciplinary Innovat, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing Key Lab Magnetophotoelect Composite & Int, Beijing 100083, Peoples R China Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Peking Univ, Res Ctr Light Element Adv Mat, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China |
| Keywords | SINGLE-CRYSTAL GRAPHENE LIGHT-EMITTING-DIODES WAFER-SCALE GROWTH MONOLAYER GRAPHENE BORON-NITRIDE NANOWIRES LAYER |
| Issue Date | Dec-2021 |
| Publisher | ADVANCED MATERIALS |
| Abstract | Quasi van der Waals epitaxy, a pioneering epitaxy of sp(3)-hybridized semiconductor films on sp(2)-hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming C-O-N-Ga(3) or C-O-Ga-N(3) configurations, respectively, on artificial C-O surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices. |
| URI | http://hdl.handle.net/20.500.11897/631545 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.202106814 |
| Indexed | EI SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
