| Title | Theoretical calculation boosting the chemical vapor deposition growth of graphene film |
| Authors | Cheng, Ting Sun, Luzhao Liu, Zhirong Ding, Feng Liu, Zhongfan |
| Affiliation | Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci,Ctr Nanochem, Acad Adv Interdisciplinary Studies,Beijing Sci &, Beijing 100871, Peoples R China Beijing Graphene Inst BGI, Beijing 100095, Peoples R China Inst Basic Sci, CtreMultidimens Carbon Mat, Ulsan, South Korea Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan, South Korea |
| Keywords | SINGLE-CRYSTAL GRAPHENE TWISTED BILAYER GRAPHENE KINETIC MONTE-CARLO GAS-PHASE DYNAMICS MOLECULAR-DYNAMICS CARRIER MOBILITY SURFACE IMPLEMENTATION APPROXIMATION ORIENTATION |
| Issue Date | 1-Jun-2021 |
| Publisher | APL MATERIALS |
| Abstract | Chemical vapor deposition (CVD) is a promising method for the mass production of high-quality graphene films, and great progress has been made over the last decade. Currently, the CVD growth of graphene is being pushed to achieve further advancements, such as super-clean, ultra-flat, and defect-free materials, as well as controlling the layer, stacking order, and doping level during large-scale preparation. The production of high-quality graphene by CVD relies on an in-depth knowledge of the growth mechanisms, in which theoretical calculations play a crucial role in providing valuable insights into the energy-, time-, and scale-dependent processes occurring during high-temperature growth. Here, we focus on the theoretical calculations and discuss the recent progress and challenges that need to be overcome to achieve controllable growth of high-quality graphene films on transition-metal substrates. Furthermore, we present some state-of-the-art graphene-related structures with novel properties, which are expected to enable new applications of graphene-based materials. (c) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
| URI | http://hdl.handle.net/20.500.11897/624307 |
| ISSN | 2166-532X |
| DOI | 10.1063/5.0051847 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ |
