Title | Fabrication of integrated silicon PIN detector based on Al-Sn-Al bonding for Delta E-E telescope application |
Authors | Zhu, Zhiyuan Yu, Min Jin, Yufeng |
Affiliation | Southwest Univ, Coll Elect & Informat Engn, Chongqing Key Lab Nonlinear Circuits & Intelligen, Chongqing, Peoples R China Peking Univ, Inst Microelect, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing, Peoples R China |
Keywords | SIMULATION AREA |
Issue Date | 15-Jul-2021 |
Publisher | MICROELECTRONIC ENGINEERING |
Abstract | The conventional monolithic integration of silicon PIN detector as Delta E-E telescope suffer from incompatibility with IC process, signal crosstalk, high cost, etc.. In this paper, integrated silicon PIN detector based on Al-Sn-Al bonding is proposed. The intermediate conductive layer between thin and thick PIN structure comprises of metallic bonding layer, which can reduce the signal crosstalk. Moreover, the novel integration process enables known-good-die (KGD) bonding of thin and thick PIN structure, which increases flexibility and reliability of the fabrication process. Besides, the fabrication reduces the cost and increases reliability by utilizing silicon integrated process. |
URI | http://hdl.handle.net/20.500.11897/623337 |
ISSN | 0167-9317 |
DOI | 10.1016/j.mee.2021.111599 |
Indexed | SCI(E) |
Appears in Collections: | 信息科学技术学院 |