| Title | Memory materials and devices: From concept to application |
| Authors | Zhang, Zhenhan Wang, Zongwei Shi, Tuo Bi, Chong Rao, Feng Cai, Yimao Liu, Qi Wu, Huaqiang Zhou, Peng |
| Affiliation | Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200082, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China |
| Keywords | PHASE-CHANGE MATERIALS CURRENT-VOLTAGE CHARACTERISTICS RESISTIVE SWITCHING MEMORY NONVOLATILE MEMORY TRANSITION RRAM RESISTANCE LAYER TAOX HETEROSTRUCTURES |
| Issue Date | Mar-2020 |
| Publisher | INFOMAT |
| Abstract | Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate-induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high-performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two-dimensional material-based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase-change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review. image |
| URI | http://hdl.handle.net/20.500.11897/621480 |
| DOI | 10.1002/inf2.12077 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息科学技术学院 |
