| Title | Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology* |
| Authors | Sun, Shuang Wang, Jian-Huan Zhang, Bao-Tong Li, Xiao-Kang Cai, Qi-Feng An, Xia Xu, Xiao-Yan Zhang, Jian-Jun Li, Ming |
| Affiliation | Peking Univ, Dept Micronanoelect, Beijing 100871, Peoples R China Peking Univ, Beijing Lab Future IC Technol & Sci, Beijing 100871, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China |
| Issue Date | Jul-2021 |
| Publisher | CHINESE PHYSICS B |
| Abstract | A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a channel with low density defects for high-performance FinFET technology. In order to study the effects of fin width and crystallography orientation on the MBE behavior, a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of 100 and 110. The result shows that a defect-free Si film was obtained on the fin by MBE, since the etching damage was confined in the bottom of the epitaxial layer. In addition, the vertical growth of the epitaxial Si layer was observed on sub-10 nm 100 Si fins, and this was explained by a kinetic mechanism. |
| URI | http://hdl.handle.net/20.500.11897/618654 |
| ISSN | 1674-1056 |
| DOI | 10.1088/1674-1056/abf63f |
| Indexed | EI SCI(E) |
| Appears in Collections: | 待认领 |
