Title New Growth Frontier: Superclean Graphene
Authors Zhang, Jincan
Sun, Luzhao
Jia, Kaicheng
Liu, Xiaoting
Cheng, Ting
Peng, Hailin
Lin, Li
Liu, Zhongfan
Affiliation Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem,Beijing Natl Lab Mol Sci, Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China
Beijing Graphene Inst BGI, Beijing 100095, Peoples R China
Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
Issue Date 22-Sep-2020
Publisher ACS NANO
Abstract The last 10 years have witnessed significant progress in chemical vapor deposition (CVD) growth of graphene films. However, major hurdles remain in achieving the excellent quality and scalability of CVD graphene needed for industrial production and applications. Early efforts were mainly focused on increasing the single-crystalline domain size, large-area uniformity, growth rate, and controllability of layer thickness and on decreasing the defect concentrations. An important recent advance was the discovery of the inevitable contamination phenomenon of CVD graphene film during high-temperature growth processes and the superclean growth technique, which is closely related to the surface defects and to the peeling-off and transfer quality. Superclean graphene represents a new frontier in CVD graphene research. In this Perspective, we aim to provide comprehensive understanding of the intrinsic growth contamination and the experimental solution of making superclean graphene and to provide an outlook for future commercial production of high-quality CVD graphene films.
URI http://hdl.handle.net/20.500.11897/617525
ISSN 1936-0851
DOI 10.1021/acsnano.0c06141
Indexed SCI(E)
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