| Title | Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes |
| Authors | Zhang, Xiang Chen, Zhaolong Chang, Hongliang Yan, Jianchang Yang, Shenyuan Wang, Junxi Gao, Peng Wei, Tongbo |
| Affiliation | Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem CNC, Beijing Natl Lab Mol Sci, Beijing, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing, Peoples R China |
| Keywords | GAN GROWTH LAYERS |
| Issue Date | Jun-2020 |
| Publisher | JOVE-JOURNAL OF VISUALIZED EXPERIMENTS |
| Abstract | This protocol demonstrates a method for graphene-assisted quick growth and coalescence of AlN on nano-pattened sapphire substrate (NPSS). Graphene layers are directly grown on NPSS using catalyst-free atmospheric-pressure chemical vapor deposition (APCVD). By applying nitrogen reactive ion etching (RIE) plasma treatment, defects are introduced into the graphene film to enhance chemical reactivity. During metal-organic chemical vapor deposition (MOCVD) growth of AlN, this N-plasma treated graphene buffer enables AlN quick growth, and coalescence on NPSS is confirmed by cross-sectional scanning electron microscopy (SEM). The high quality of AlN on graphene-NPSS is then evaluated by X-ray rocking curves (XRCs) with narrow (0002) and (10-12) full width at half-maximum (FWHM) as 267.2 arcsec and 503.4 arcsec, respectively. Compared to bare NPSS, AlN growth on graphene-NPSS shows significant reduction of residual stress from 0.87 GPa to 0.25 Gpa, based on Raman measurements. Followed by AlGaN multiple quantum wells (MQWS) growth on graphene-NPSS, AlGaN-based deep ultraviolet light-emitting-diodes (DUV LEDs) are fabricated. The fabricated DUV-LEDs also demonstrate obvious, enhanced luminescence performance. This work provides a new solution for the growth of high quality AlN and fabrication of high performance DUV-LEDs using a shorter process and less costs. |
| URI | http://hdl.handle.net/20.500.11897/617181 |
| ISSN | 1940-087X |
| DOI | 10.3791/60167 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ 物理学院 |
