| Title | Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes |
| Authors | Yu, Ye Wang, Tao Chen, Xiufang Zhang, Lidong Wang, Yang Niu, Yunfei Yu, Jiaqi Ma, Haotian Li, Xiaomeng Liu, Fang Deng, Gaoqiang Shi, Zhifeng Zhang, Baolin Wang, Xinqiang Zhang, Yuantao |
| Affiliation | Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China |
| Keywords | DISLOCATION DENSITY STRESS LAYER SPECTROSCOPY DEPENDENCE |
| Issue Date | 3-Jun-2021 |
| Publisher | LIGHT-SCIENCE & APPLICATIONS |
| Abstract | Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C-N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes. |
| URI | http://hdl.handle.net/20.500.11897/615538 |
| ISSN | 2047-7538 |
| DOI | 10.1038/s41377-021-00560-3 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
