| Title | Broadband Bi2O2Se Photodetectors from Infrared to Terahertz |
| Authors | Chen, Yunfeng Ma, Wanli Tan, Congwei Luo, Man Zhou, Wei Yao, Niangjuan Wang, Hao Zhang, Lili Xu, Tengfei Tong, Tong Zhou, Yong Xu, Yongbing Yu, Chenhui Shan, Chongxin Peng, Hailing Yue, Fangyu Wang, Peng Huang, Zhiming Hu, Weida |
| Affiliation | Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Peoples R China Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China Zhengzhou Univ, Sch Phys & Engn, Henan Key Lab Diamond Optoelect Mat & Devices, Zhengzhou 450001, Peoples R China East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China East China Normal Univ, Dept Elect, Shanghai 200241, Peoples R China Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China |
| Issue Date | Jan-2021 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Abstract | 2D Bi2O2Se has shown great potential in photodetector from visible to infrared (IR) owing to its high mobility, ambient stability, and layer-tunable bandgaps. However, for the terahertz (THz) band with longer wavelength and richer spectral information, there are few reports on the research of THz detection based on 2D materials. Herein, an antenna-assisted Bi2O2Se photodetector is constructed to achieve broadband photodetection from IR to THz ranges driven by multi-mechanism of electromagnetic waves to electrical conversion. The good tradeoff between the bandgap and high mobility results in a broad spectral detection. In the IR region, the nonequilibrium carriers result from photo-induced electron-hole pairs in the Bi2O2Se body. While in the THz region, the carriers are caused by the injected electrons from the metal electrodes by the electromagnetic-induced well. The Bi2O2Se photodetector achieves a broadband responsivity of 58 A W-1 at 1550 nm, 2.7 x 104 V W-1 at 0.17 THz, and 1.9 x 108 V W-1 at 0.029 THz, respectively. Surprisingly, an ultrafast response time of 476 ns and a quite low noise equivalent power of 0.2 pW Hz-1/2 are acquired at room temperature. Our researches exhibit promising prospects of Bi2O2Se in broadband detection, THz imaging, and ultrafast sensing. |
| URI | http://hdl.handle.net/20.500.11897/608472 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.202009554 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ |
