| Title | Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures |
| Authors | Yang, Liuyun Wang, Xinqiang Wang, Tao Wang, Jingyue Zhang, Wenjie Quach, Patrick Wang, Ping Liu, Fang Li, Duo Chen, Ling Liu, Shangfeng Wei, Jiaqi Yang, Xuelin Xu, Fujun Tang, Ning Tan, Wei Zhang, Jian Ge, Weikun Wu, Xiaosong Zhang, Chi Shen, Bo |
| Affiliation | Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing 100871, Peoples R China Peking Univ, Collaborat Innovat Ctr Quantum Matter, Sch Phys, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610299, Peoples R China Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct SKLSM, POB 912, Beijing 100083, Peoples R China Univ Chinese Acad Sci, Chinese Acad Sci CAS, Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China |
| Keywords | INTERSUBBAND TRANSITION ALGAN/GAN HEMTS QUANTUM-WELL MOBILITY OSCILLATIONS SCATTERING PHASE |
| Issue Date | Sep-2020 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Abstract | Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 omega sq(-1)is achieved by molecular beam epitaxy, where Shubnikov-de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two-dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three-subband occupation in the triangle quantum well for the first time, with the electron density ofn(1)=2.2x10(13) cm(-2),n(2)= 2.3x10(12)cm(-2), andn(3)=8.8x10(11)cm(-2), respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three-subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto-intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices. |
| URI | http://hdl.handle.net/20.500.11897/607623 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.202004450 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
