| Title | Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes |
| Authors | Chang, Hongliang Chen, Zhaolong Liu, Bingyao Yang, Shenyuan Liang, Dongdong Dou, Zhipeng Zhang, Yonghui Yan, Jianchang Liu, Zhiqiang Zhang, Zihui Wang, Junxi Li, Jinmin Liu, Zhongfan Gao, Peng Wei, Tongbo |
| Affiliation | Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Peking Univ, Ctr Nanochem CNC, Beijing Sci & Engn Ctr Nanocarbons, Coll Chem & Mol Engn, Beijing 100871, Peoples R China Beijing Graphene Inst BGI, Beijing 100095, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Keywords | SPECTROSCOPY EPITAXY LAYER |
| Issue Date | Jun-2020 |
| Publisher | ADVANCED SCIENCE |
| Abstract | Efficient and low-cost production of high-quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light-emitting diodes (DUV-LEDs). Here, the quasi-2D growth of high-quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high-performance 272 nm DUV-LED is demonstrated. Guided by first-principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr-driven quasi-2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as-fabricated 272 nm DUV-LED shows a 22% enhancement of output power than that with low-temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV-LEDs. |
| URI | http://hdl.handle.net/20.500.11897/607120 |
| DOI | 10.1002/advs.202001272 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ 物理学院 |
