Title | Batch synthesis of transfer-free graphene with wafer-scale uniformity |
Authors | Jiang, Bei Zhao, Qiyue Zhang, Zhepeng Liu, Bingzhi Shan, Jingyuan Zhao, Liang Rummeli, Mark H. Gao, Xuan Zhang, Yanfeng Yu, Tongjun Sun, Jingyu Liu, Zhongfan |
Affiliation | Peking Univ, Ctr Nanochem CNC, Beijing Sci & Engn Ctr Nanocarbons, Coll Chem & Mol Engn, Beijing 100871, Peoples R China Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China Soochow Univ, Coll Energy, Soochow Inst Energy & Mat Innovat SIEMIS, Key Lab Adv Carbon Mat & Wearable Energy Technol, Suzhou 215006, Peoples R China BGI, Beijing 100095, Peoples R China |
Keywords | CHEMICAL-VAPOR-DEPOSITION FEW-LAYER GRAPHENE LARGE-AREA GROWTH FILMS OXIDE EXFOLIATION GLASS |
Issue Date | Apr-2020 |
Publisher | NANO RESEARCH |
Abstract | Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics. However, rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge. Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition (CVD) on quartz. Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch, affording a low fluctuation of optical and electrical properties. Computational fluid dynamics simulations reveal the mechanism of uniform growth, indicating thermal field and confined flow field play leading roles in attaining the batch uniformity. The resulting wafer-scale graphene enables the direct utilization as key components in optical elements. Our method is applicable to other types of insulating substrates (e.g., sapphire, SiO2/Si, Si3N4), which may open a new avenue for direct manufacture of graphene wafers in an economic fashion. |
URI | http://hdl.handle.net/20.500.11897/606623 |
ISSN | 1998-0124 |
DOI | 10.1007/s12274-020-2771-3 |
Indexed | SCI(E) Scopus EI |
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