| Title | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection |
| Authors | Zou, Taoyu Xiang, Ben Xu, Yangbing Wang, Ya Liu, Chuan Chen, Jun Wang, Kai Dai, Qing Zhang, Shengdong Noh, Yong-Young Zhou, Hang |
| Affiliation | Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 37673, South Korea Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Div Nanophoton, Beijing 100190, Peoples R China |
| Issue Date | 2021 |
| Publisher | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
| Abstract | The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskitebased image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm(-2), and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 x 10(2)mu C mGy(air)(-1)cm(-3). Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 mu Gy(air) s(-1). This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager. |
| URI | http://hdl.handle.net/20.500.11897/605805 |
| ISSN | 2168-6734 |
| DOI | 10.1109/JEDS.2020.3040771 |
| Indexed | SCI(E) |
| Appears in Collections: | 深圳研究生院待认领 |
