Title Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves
Authors Yang, Jie
Quhe, Ruge
Liu, Shiqi
Peng, Yuxuan
Sun, Xiaotian
Zha, Liang
Wu, Baochun
Shi, Bowen
Yang, Chen
Shi, Junjie
Tian, Guang
Wang, Changsheng
Lu, Jing
Yang, Jinbo
Affiliation Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
Peking Univ, Sch Phys, Beijing 100871, Peoples R China
Peking Univ, Inst Condensed Matter & Mat Phys, Sch Phys, Beijing 100871, Peoples R China
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
Luoyang Normal Univ, Coll Chem & Chem Engn, Luoyang 471934, Peoples R China
Luoyang Normal Univ, Henan Key Lab Funct Oriented Porous Mat, Luoyang 471934, Peoples R China
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
Peking Univ, Beijing Key Lab Magnetoelect Mat & Devices BKL ME, Beijing 100871, Peoples R China
Keywords ROOM-TEMPERATURE
DOMAIN-WALL
RESISTIVITY
GRAPHENE
Issue Date 28-Nov-2020
Publisher PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Abstract Ferromagnetic order in two-dimensional (2D) van der Waals crystals has been attracting much attention recently. Remarkably, room temperature metallic ferromagnetism is realized in 2D Fe3GeTe2. Here we design a monolayer (ML) Fe3GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes and applying a magnetic field to these ferromagnetic electrodes. We investigate the spin-involved transport characteristics of such a spin valve by using ab initio quantum transport simulation. A high magnetoresistance of similar to 390% is obtained and significantly increased to 450-510% after the gates are introduced. The magnetoresistance of the ML Fe3GeTe2 spin valve is insensitive to the strain modulation. Our study provides a potential option for magnetic storage applications and will motivate further studies in spintronics based on this class of materials.
URI http://hdl.handle.net/20.500.11897/599554
ISSN 1463-9076
DOI 10.1039/d0cp03761c
Indexed SCI(E)
Appears in Collections: 其他实验室
人工微结构和介观物理国家重点实验室

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