| Title | Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids |
| Authors | He, Chenguang Zhao, Wei Wu, Hualong Liu, Ningyang Zhang, Shan Li, Junze Jia, Chuanyu Zhang, Kang He, Longfei Chen, Zhitao Shen, Bo |
| Affiliation | Guangdong Acad Sci GDAS, Guangdong Inst Semicond Ind Technol GISIT, Guangzhou 510650, Peoples R China Guangdong Guangyue Technol Co Ltd, Foshan 528200, Peoples R China Guangzhou Univ, Sch Phys & Elect Engn, Solid State Phys & Mat Res Lab, Guangzhou 510006, Peoples R China China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China Dongguan Univ Technol, Sch Elect Engn & Intelligentizat, Dongguan 523808, Peoples R China Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China |
| Keywords | HIGH-QUALITY ALN STRAIN RELAXATION SAPPHIRE MECHANISM ALGAN |
| Issue Date | 30-Sep-2020 |
| Publisher | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
| Abstract | Recently, there have been increasing demands for high-quality AlN/sapphire templates due to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low threading dislocation density (TDD), AlN films are usually thickened to promote dislocation interaction. However, micro cracks are easily generated when their thicknesses exceed 2-3 mu m, severely deteriorating device performances. In this study, we successfully fabricated a 5.6 mu m-thick crack-free AlN film by employing a medium-temperature (MT) interlayer. It is revealed that high-density (1.7 x 10(10)cm(-2)) nano-voids were self-organized above the MT interlayer, which effectively destroyed the coherence between the MT interlayer and the subsequent epilayer by reducing contact area. As a result, tensile stress in the AlN film during growth was significantly decreased to 0.18 GPa, demonstrating a 64% reduction compared with its counterpart without nano-voids. In addition, the thick AlN film with embeded nano-voids allowed dislocations to climb long distances for mutual annihilation, so the TDD of the AlN film was significantly decreased to an extremely low value of 4.7 x 10(7)cm(-2). This technique paves the way for achieving high-performance DUV LEDs and other optoelectronic/electronic devices. |
| URI | http://hdl.handle.net/20.500.11897/590625 |
| ISSN | 0022-3727 |
| DOI | 10.1088/1361-6463/ab97d9 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
