| Title | Epitaxial growth and band structure of antiferromagnetic Mott insulator CeOI |
| Authors | Cai, Xinqiang Xu, Zhilin Zhou, Hui Ren, Jun Li, Na Meng, Sheng Ji, Shuai-Hua Chen, Xi |
| Affiliation | Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China |
| Keywords | FERROMAGNETISM CERIUM OXIDE |
| Issue Date | 2-Jun-2020 |
| Publisher | PHYSICAL REVIEW MATERIALS |
| Abstract | The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by density-functional theory +U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by in situ scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a member to the two-dimensional magnetic materials. |
| URI | http://hdl.handle.net/20.500.11897/589509 |
| ISSN | 2475-9953 |
| DOI | 10.1103/PhysRevMaterials.4.064003 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息科学技术学院 纳米器件物理与化学教育部重点实验室 |
