| Title | Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations |
| Authors | Li, Mingqiang Li, Xiaomei Li, Yuehui Liu, Heng-Jui Chu, Ying-Hao Gao, Peng |
| Affiliation | Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan Acad Sinica, Inst Phys, Taipei 11529, Taiwan Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Keywords | TRANSMISSION ELECTRON-MICROSCOPY QUANTITATIVE MEASUREMENT FERROELECTRIC PBTIO3 POLARIZATION DISPLACEMENT CONDUCTION HREM |
| Issue Date | 15-Apr-2020 |
| Publisher | ACTA MATERIALIA |
| Abstract | Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/588286 |
| ISSN | 1359-6454 |
| DOI | 10.1016/j.actamat.2020.02.032 |
| Indexed | SCI(E) Scopus EI |
| Appears in Collections: | 物理学院 前沿交叉学科研究院 |
