| Title | Micro-Raman investigation on the size effects of surface optical phonon modes in single cone-shape InGaN/GaN microrods |
| Authors | Liao, Hui Wen, Peijun Yu, Guo Akbar, Muhammad Saddique Li, Junchao Lang, Rui Lei, Menglai Mi, Zehan Hu, Xiaodong |
| Affiliation | Shihezi Univ, Dept Phys, Coll Sci, Xinjiang 832003, Peoples R China Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China |
| Keywords | FREE-CARRIER CONCENTRATION LASER-DIODES GAN SCATTERING ALGAN/GAN SENSORS PROBE |
| Issue Date | 15-May-2020 |
| Publisher | APPLIED SURFACE SCIENCE |
| Abstract | As one of the third generation semiconductor representative materials, nitride has been commonly used in the field of semiconductor optoelectronics. Low dimensional structures of GaN have become research hotspot. In this paper, the size effects of single InGaN/GaN core-shell microrods on the surface optical phonon mode (SO mode) are studied based on micro-Raman technology. The experimental results show that the size of the microrod would lead to the SO mode. Furthermore, the frequency of SO mode is changed with different radius of microrod. The larger the radius is, the higher the frequency of SO mode. Combined with theoretical calculation, it is found that the experimental results are in agreement with calculation. In addition, the experimental results show that the coupling of the free carrier and the longitudinal optical phonon caused the Raman shift of E-1 (LO) mode. Based on this, we obtain the distribution of carrier concentration along the [0 0 0 1] growth direction. |
| URI | http://hdl.handle.net/20.500.11897/587483 |
| ISSN | 0169-4332 |
| DOI | 10.1016/j.apsusc.2020.145656 |
| Indexed | SCI(E) Scopus EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
