| Title | A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High I-ON/I-OFF |
| Authors | Luo, Jin Lv, Zhu Huang, Qian-Qian Chen, Cheng Huang, Ru |
| Affiliation | Peking Univ, Key Lab Microelect Devices & Circuits MOE, Inst Microelect, Beijing 100871, Peoples R China. |
| Issue Date | 2018 |
| Publisher | 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) |
| Citation | 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). 2018, 302-304. |
| Abstract | Compared with conventional tunneling field-effect transistor (TFET), the novel 1-gate Schottky barrier TFET (TSB-TFET) with adaptive operation mechanism can effectively achieve higher IoN with dominant Schottky current, lower loFF by introducing self-depleted effect and steep subthreshold slope with dominant band-to-band tunneling current. To facilitate the circuit simulation based on this new kind of device, in this paper, we establish a physical current model of TSB-TFET through modeling its modulated band-to-band tunneling and Schottky barrier injection current respectively. The current model results with different device parameters agree well with Sentaurus TCAD simulation results, showing its high applicability for further circuit design and simulation. |
| URI | http://hdl.handle.net/20.500.11897/573579 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 信息科学技术学院 |
