Title | Enhanced Detectivity and Suppressed Dark Current of Perovskit-InGaZnO Phototransistor via a PCBM interlayer |
Authors | Xu, Xiaote Yan, Lizhi Zou, Taoyu Qu, Renzheng Liu, Chuan Dai, Qing Chen, Jun Zhang, Shengdong Zhou, Hang |
Affiliation | Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China. Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China. Chinese Acad Sci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China. |
Keywords | IGZO perovskite interlayer photodetector phototransistor LOW-FREQUENCY NOISE PHOTODETECTORS TRANSPARENT PERFORMANCE |
Issue Date | 2018 |
Publisher | ACS APPLIED MATERIALS & INTERFACES |
Citation | ACS APPLIED MATERIALS & INTERFACES. 2018, 10(50), 44144-44151. |
Abstract | Hybrid phototransistors based on InGaZnO (IGZO) metal oxide thin-film transistors (TFT) and a photoabsorbing capping layer such as perovskite (MAPbI(3)) are a promising low-cost device for developing advanced X-ray and UV flat-panel imagers. However, it is found that the introduction of MAPbI(3) inevitably damages the IGZO channel layer during fabrication, leading to deteriorated TFT characteristics such as off-current rising and threshold voltage shift. Here, we report an effective approach for improving the performance of the perovskite-IGZO phototransistor by inserting a [6,6]-phenyl C61-butyric acid methyl ester (PCBM) or PCBM:PMMA interlayer between the patterned MAPbI(3) and IGZO. The interlayer effectively prevents the IGZO from damage by the perovskite fabrication process, while allowing efficient charge transfer for photosensing. In this configuration, we have achieved a high-detectivity (1.35 x 10(12) Jones) perovskite-IGZO phototransistor with suppressed off-state drain current (similar to 10 pA) in the dark. This work points out the importance of interface engineering for realizing higher performance and reliable heterogeneous phototransistors. |
URI | http://hdl.handle.net/20.500.11897/572221 |
ISSN | 1944-8244 |
DOI | 10.1021/acsami.8b16346 |
Indexed | SCI(E) Medline |
Appears in Collections: | 深圳研究生院待认领 |