| Title | Epitaxial Synthesis of Monolayer PtSe(2)( )Single Crystal on MoSe2 with Strong Interlayer Coupling |
| Authors | Zhou, Jiadong Kong, Xianghua Sekhar, M. Chandra Lin, Junhao Le Goualher, Frederic Xu, Rui Wang, Xiaowei Chen, Yu Zhou, Yao Zhu, Chao Lu, Wei Liu, Fucai Tang, Bijun Guo, Zenglong Zhu, Chao Cheng, Zhihai Yu, Ting Suenaga, Kazu Sun, Dong Ji, Wei Liu, Zheng |
| Affiliation | Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China Nanyang Technol Univ, Sch Phys & Math Sci, Ctr Disrupt Photon Technol, Singapore 637371, Singapore Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan CNRS Int NTU THALES Res Alliances, UMI 3288, Res Techno Plaza,50 Nanyang Dr,Border X Block, Singapore 637553, Singapore |
| Keywords | PtSe2 PtSe2/MoSe2 heterostructure two-dimensional material chemical vapor deposition interlayer coupling |
| Issue Date | 2019 |
| Publisher | ACS NANO |
| Abstract | PtSe2, a layered two-dimensional transition-metal dichalcogenide (TMD), has drawn intensive attention owing to its layer-dependent band structure, high air stability, and spin-layer locking effect which can be used in various applications for next-generation optoelectronic and electronic devices or catalysis applications. However, synthesis of PtSe2 is highly challenging due to the low chemical reactivity of Pt sources. Here, we report the chemical vapor deposition of monolayer PtSe2 single crystals on MoSe2. The periodic Moire patterns from the vertically stacked heterostructure (PtSe2/MoSe2) are clearly identified via annular dark-field scanning transmission electron microscopy. First-principles calculations show a type II band alignment and reveal interface states originating from the strong-weak interlayer coupling (SWIC) between PtSe2 and MoSe2 monolayers, which is supported by the electrostatic force microscopy imaging. Ultrafast hole transfer between PtSe2 and MoSe2 monolayers is observed in the PtSe2/MoSe2 heterostructure, matching well with the theoretical results. Our study will shed light on the synthesis of Pt-based TMD heterostructures and boost the realization of SWIC-based optoelectronic devices. |
| URI | http://hdl.handle.net/20.500.11897/553463 |
| ISSN | 1936-0851 |
| DOI | 10.1021/acsnano.8b09479 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 |
