| Title | First-principles study of C-N point defects on sidewall surface of [0001]-oriented GaN nanowires |
| Authors | Liao, Hui Li, Junchao Wei, Tiantian Wen, Peijun Li, Mo Hu, Xiaodong |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China |
| Keywords | GaN nanowires First-principles Point defects Electronic structures |
| Issue Date | 2019 |
| Publisher | APPLIED SURFACE SCIENCE |
| Abstract | By using the first-principles, the electronic structure and optical properties of C-N point defects on sidewall surface of [0 0 01]-oriented GaN nanowires were calculated. We found that C-N point defects are more likely to be enriched on the surface of the GaN NWs. In addition, the closer the C-N point defect to the sidewall of the GaN NWs, the greater the effects of C-N point defect to the top of valence band. The C-N point defects in different depths may lead to the yellow luminescence, and the red shift of PL spectral wavelength would occur when it tends to the surface. This may be one of the reasons for the broadening of the yellow luminescence. |
| URI | http://hdl.handle.net/20.500.11897/550662 |
| ISSN | 0169-4332 |
| DOI | 10.1016/j.apsusc.2018.10.106 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
