| Title | Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors |
| Authors | Chen, Changdong Yang, Bo-Ru Li, Gongtan Zhou, Hang Huang, Bolong Wu, Qian Zhan, Runze Noh, Yong-Young Minari, Takeo Zhang, Shengdong Deng, Shaozhi Sirringhaus, Henning Liu, Chuan |
| Affiliation | Sun Yat Sen Univ, Shunde Int Joint Res Inst, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol,State Key Lab Optoel, Guangzhou 510275, Guangdong, Peoples R China Peking Univ, Shenzhen Grad Sch, Shenzhen Key Lab Thin Film Transistor & Adv Displ, Shenzhen 518055, Peoples R China Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Kowloon, Hung Hom, Hong Kong, Peoples R China Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China Dongguk Univ, Dept Energy & Mat Engn, 30 Pildong Ro,1 Gil, Seoul 04620, South Korea Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan Univ Cambridge, Dept Phys, Cambridge CB3 1HK, England |
| Keywords | carrier mobility doping four-probe measurement surface potential scanning thin-film transistors |
| Issue Date | 2019 |
| Publisher | ADVANCED SCIENCE |
| Abstract | For newly developed semiconductors, obtaining high-performance transistors and identifying carrier mobility have been hot and important issues. Here, large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on-off ratio is remarkable in the long-channel devices (e.g., 40 times in 200 mu m long transistors) but becomes much less pronounced in short-channel devices (e.g., 2 times in 5 mu m long transistors), which limits its application to the display industry. Combining gated four-probe measurements, scanning Kelvin-probe microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source-drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin-film transistors or field-effect transistors with advanced semiconductors. |
| URI | http://hdl.handle.net/20.500.11897/549224 |
| ISSN | 2198-3844 |
| DOI | 10.1002/advs.201801189 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 深圳研究生院待认领 |
