| Title | Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals |
| Authors | Sun, Yan Zhou, Zishu Huang, Zhen Wu, Jiangbin Zhou, Liujiang Cheng, Yang Liu, Jinqiu Zhu, Chao Yu, Maotao Yu, Peng Zhu, Wei Liu, Yue Zhou, Jian Liu, Bowen Xie, Hongguang Cao, Yi Li, Hai Wang, Xinran Liu, Kaihui Wang, Xiaoyong Wang, Jianpu Wang, Lin Huang, Wei |
| Affiliation | Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, KLOFE, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Univ Southern Calif, Ming Hsieh Dept Elect Engn, Los Angeles, CA 90089 USA Los Alamos Natl Lab, Ctr Nonlinear Studies, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA Peking Univ, Sch Phys Dept, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmable Mat, Singapore 639798, Singapore Sun Yat Sen Univ, Sch Mat Sci & Engn, Guangzhou 510275, Guangdong, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China NPU, SIFE, 127 West Youyi Rd, Xian 710072, Shaanxi, Peoples R China |
| Keywords | 2D materials band alignment heterostructures interlayer interactions lead iodide |
| Issue Date | 2019 |
| Publisher | ADVANCED MATERIALS |
| Abstract | To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI2-based interfacial semiconductors, PbI2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers; type I band alignment in MoS2/PbI2 stacks, where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS2/PbI2 and WSe2/PbI2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS2, WS2, and WSe2 monolayers with similar electronic structures show completely distinct light-matter interactions when interfacing with PbI2, providing unprecedented capabilities to engineer the device performance of 2D heterostructures. |
| URI | http://hdl.handle.net/20.500.11897/548971 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.201806562 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
