| Title | Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN |
| Authors | Xu, Yue Yang, Xuelin Zhang, Peng Cao, Xingzhong Chen, Yao Guo, Shiping Wu, Shan Zhang, Jie Feng, Yuxia Xu, Fujun Wang, Xinqiang Ge, Weikun Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Issue Date | 2019 |
| Publisher | APPLIED PHYSICS EXPRESS |
| Abstract | We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations. (C) 2019 The Japan Society of Applied Physics |
| URI | http://hdl.handle.net/20.500.11897/547949 |
| ISSN | 1882-0778 |
| DOI | 10.7567/1882-0786/ab1c19 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
