| Title | A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation |
| Authors | Zhao, Yang Liang, Zhongxin Huang, Qianqian Chen, Cheng Yang, Mengxuan Sun, Zixuan Zhu, Kunkun Wang, Huimin Liu, Shuhan Liu, Tianyi Peng, Yue Han, Genquan Huang, Ru |
| Affiliation | Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China |
| Keywords | Sub-threshold slope band-to-band tunneling (BTBT) negative capacitance junction depleted-modulation tunnel field-effect transistor |
| Issue Date | 2019 |
| Publisher | IEEE ELECTRON DEVICE LETTERS |
| Abstract | In this letter, a novel negative capacitance tunnel FET (NC-TFET) design based on junction depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec subthreshold swing (SS). By a striped gate stack design with integrated ferroelectric Hf0.5Zr0.5O2, the fabricated Si NC junction-modulated TFET (NC-JTFET) exhibits steeper SS, higher ON-current for almost two decades than Si TFET without OFF-current degradation, as well as nearly non-hysteresis behavior. The experimental results show the great potential of NC-JTFET for ultralow-standby-power IoT applications. |
| URI | http://hdl.handle.net/20.500.11897/547905 |
| ISSN | 0741-3106 |
| DOI | 10.1109/LED.2019.2909410 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
