| Title | Stress study of GaN grown on serpentine-channels masked Si(111) substrate by MOCVD |
| Authors | Wei, Tiantian Liao, Hui Jiang, Shengxiang Yang, Yue Zong, Hua Li, Junchao Yu, Guo Wen, Peijun Lang, Rui Hu, Xiaodong |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Microscop, Beijing 100871, Peoples R China |
| Keywords | GaN Si(111) Serpentine-channeled mask Stress state Micro-Raman Finite-element method |
| Issue Date | 2019 |
| Publisher | SUPERLATTICES AND MICROSTRUCTURES |
| Abstract | An advanced epitaxial lateral overgrowth (ELOG) structure named "serpentine-channels masked Si(111) substrate" has been introduced, which only has one high-defect region per period compared with the conventional ELOG method. We successfully obtained both coalesced and uncoalesced GaN layers on the substrate simultaneously by the metal-organic chemical vapor deposition (MOCVD) method. The stress states of these two kinds of GaN epilayers were investigated by room-temperature micro-Raman scattering technique. The stress level in the uncoalesced GaN layer was a little lower than that in the coalesced GaN layer. Raman spectra reveal the periodical variations of residual tensile stress in GaN by analyzing E-2 (high) phonon mode. In addition, thermal stress distribution of GaN was simulated by elasticity theory using the finite-element method (FEM). The results of simulation are entirely consistent with the experimental results derived from micro-Raman measurements. |
| URI | http://hdl.handle.net/20.500.11897/547680 |
| ISSN | 0749-6036 |
| DOI | 10.1016/j.spmi.2019.05.029 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 |
