| Title | Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene |
| Authors | Chen, Zhaolong Liu, Zhiqiang Wei, Tongbo Yang, Shenyuan Dou, Zhipeng Wang, Yunyu Ci, Haina Chang, Hongliang Qi, Yue Yan, Jianchang Wang, Junxi Zhang, Yanfeng Gao, Peng Li, Jinmin Liu, Zhongfan |
| Affiliation | Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China Peking Univ, Coll Chem & Mol Engn, Beijing Sci & Engn Ctr Nanocarbons, Ctr Nanochem CNC, Beijing 100871, Peoples R China Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Univ Chinese Acad Sci, Sch Microelect, Beijing 101408, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China BGI, Beijing 100095, Peoples R China |
| Keywords | aluminum nitride chemical vapor deposition deep-ultraviolet light-emitting diodes graphene quasi-van der Waals epitaxy |
| Issue Date | 2019 |
| Publisher | ADVANCED MATERIALS |
| Abstract | The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror-smooth single-crystal film in a very short time of approximate to 0.5 h (approximate to 50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as-fabricated DUV-LED shows a low turn-on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films. |
| URI | http://hdl.handle.net/20.500.11897/547659 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.201807345 |
| Indexed | SCI(E) EI |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ 物理学院 |
