| Title | Role of hole trapping in the unintentionally doped GaN layer in suppressing the two-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si |
| Authors | Hu, Anqi Song, Chunyan Yang, Xuelin He, Xiaoying Shen, Bo Guo, Xia |
| Affiliation | Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Sch Elect Engn, Beijing 100876, Peoples R China Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Beijing Univ Posts & Telecommun, Beijing Key Lab Work Safety Intelligent Monitorin, Beijing 100876, Peoples R China |
| Keywords | AlGaN/GaN on Si 2DEG degradation hole trapping UID GaN |
| Issue Date | 2019 |
| Publisher | NANOTECHNOLOGY |
| Abstract | We identify the spatially resolved trapping mechanism and clarify the role of the unintentionally doped (UID) GaN layer in suppressing the two-dimensional electron gas (2DEG) degradation in AlGaN/GaN heterostructures on Si. The trapping mechanism is characterized by measuring C-V dispersion after three different configurations of bias stress: high drain-substrate voltage stress, high drain-gate voltage stress and combined stress (with both high drain-gate voltage and drain-substrate voltage stress). Under the combined stress, the 2DEG degradation is the overall effect of electron trapping and hole trapping. By comparing samples with and without the UID GaN layer, we confirm the role of the UID layer in suppressing the 2DEG degradation by hole trapping in that layer. The electron and hole trap states are further identified by reversed vertical stress and current transient measurements. The electron trap with an activation energy of 0.53 eV and the hole trap with an activation energy of 0.81 eV are distinguished. |
| URI | http://hdl.handle.net/20.500.11897/546031 |
| ISSN | 0957-4484 |
| DOI | 10.1088/1361-6528/ab1948 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
