| Title | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
| Authors | Li, Chengcheng Chen, Zhizhong Jiao, Fei Zhan, Jinglin Chen, Yifan Chen, Yiyong Nie, Jingxin Zhao, Tongyang Kang, Xiangning Feng, Shiwei Zhang, Guoyi Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Guangdong, Peoples R China Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China |
| Issue Date | 2019 |
| Publisher | RSC ADVANCES |
| Abstract | The three-dimensional thermal characteristics of micro-light-emitting diodes (mu LEDs) on GaN and sapphire substrates were studied with forward-voltage methods, thermal transient measurements, and infrared thermal imaging. The mu LEDs on the GaN substrate showed an approximately 10 degrees C lower junction temperature and smaller amplitude of the K factors than those on the sapphire substrate under the current injection level of 4 kA cm(-2). The thermal transient measurement showed that the spreading thermal resistances of the mesa, the GaN epilayer, and the interface of the GaN/substrate were reduced significantly for mu LEDs on the GaN substrate because of the high-quality GaN crystal and the homogeneous interfaces. The infrared thermal images showed lower total average junction temperatures and more uniform temperature distributions for the mu LEDs on the GaN substrate, which were also simulated with APSYS software. The thermal transport mechanisms are discussed for the lateral and vertical directions in the mu LEDs. |
| URI | http://hdl.handle.net/20.500.11897/545972 |
| DOI | 10.1039/c9ra04174e |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 核物理与核技术国家重点实验室 |
