| Title | Migration of carbon from Ga sites to N sites in GaN: a combined PAS and hybrid DFT study |
| Authors | Xu, Yue Li, Zhiqiao Yang, Xuelin Shi, Lin Zhang, Peng Cao, Xingzhong Nie, Jianfeng Wu, Shan Zhang, Jie Feng, Yuxia Zhang, Yan Wang, Xincliang Ge, Weikun Xu, Ke Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Issue Date | 2019 |
| Publisher | JAPANESE JOURNAL OF APPLIED PHYSICS |
| Abstract | Carbon (C) is of great importance to realize semi-insulating gallium nitride (GaN) for power electronic devices. We demonstrate that C can migrate from Ga sites to N sites after high temperature annealing of C doped GaN. The migration process is revealed through the observation of the generated Ga vacancies-related defects after annealing by positron annihilation spectroscopy. The activation energy of this migration process is estimated to be 2.5-2.8 eV from the temperature dependent annealing experiments, which is well consistent with the theoretical results from first-principles calculations. (C) 2019 The Japan Society of Applied Physics |
| URI | http://hdl.handle.net/20.500.11897/545629 |
| ISSN | 0021-4922 |
| DOI | 10.7567/1347-4065/ab3548 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
