| Title | Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers |
| Authors | Fu, Yali Ma, Shawming Wang, Yi Xiao, Jammy Kim, M.H. Zhang, Nancy Jiao, Mingjie Wang, Frank Lee, Tammy |
| Affiliation | Peking University, School of Software and Microelectronics, Beijing, China Mattson Technology, China Field Process Group, Beijing, China Mattson Technology, Plasma Product Group, Fremont, CA, United States SMNC ETCH Department, Beijing, China |
| Issue Date | 2018 |
| Publisher | 2018 China Semiconductor Technology International Conference, CSTIC 2018 |
| Citation | 2018 China Semiconductor Technology International Conference, CSTIC 2018. 2018, 1-3. |
| Abstract | It is well known that different plasma etch tools running exactly the same process step may get mis-matched results and impact other process steps, which can cause issue of the integration to incorporate different type of tools into the same process flow. Very little prior work studied the mechanism of etch process matching between inductive coupled plasma (ICP) and capacitive coupled plasma (CCP) tool. This paper studied BEOL Plug Etch Back(PEB) process using O2 chemistry between Faraday shield ICP etch tool and traditional CCP etch tool. The process mis-match was found to cause Photo CD mis-matched at the following process step. The mechanism was studied through wafer surface analysis, it was found that film surface modification generated different surface morphology between the two types of tools with different ion energy. One potential solution was also provided to realize the mass production of the two different type tools both runing in line. © 2018 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/531012 |
| ISSN | 9781538653081 |
| DOI | 10.1109/CSTIC.2018.8369227 |
| Indexed | EI |
| Appears in Collections: | 软件与微电子学院 |
