| Title | Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing |
| Authors | Gao, Bin Wu, Huaqiang Wu, Wei Wang, Xiaohu Yao, Peng Xi, Yue Zhang, Wenqiang Deng, Ning Huang, Peng Liu, Xiaoyan Kang, Jinfeng Chen, Hong-Yu Yu, Shimeng Qian, He |
| Affiliation | Institute of Microelectronics, Tsinghua University, Beijing, China Peking University, Beijing, China GigaDevice Semiconductor Inc., Beijing, China Arizona State University, Tempe, United States |
| Issue Date | 2018 |
| Publisher | 63rd IEEE International Electron Devices Meeting, IEDM 2017 |
| Citation | 63rd IEEE International Electron Devices Meeting, IEDM 2017. 2018, 4.4.1-4.4.4. |
| Abstract | Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided. © 2017 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/530782 |
| ISSN | 9781538635599 |
| DOI | 10.1109/IEDM.2017.8268326 |
| Indexed | EI |
| Appears in Collections: | 待认领 |
