Title | Gate-controlled magnetoresistance of a paramagnetic-insulator vertical bar platinum interface |
Authors | Liang, L. Shan, J. Chen, Q. H. Lu, J. M. Blake, R. Palstra, T. T. M. Bauer, G. E. W. van Wees, B. J. Ye, J. T. |
Affiliation | Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands. Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan. Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan. Tohoku Univ, CSRN, Sendai, Miyagi 9808577, Japan. Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Univ Twente, Coll Bestuur, NL-7500 AE Enschede, Netherlands. Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands. Bauer, GEW (reprint author), Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan. Bauer, GEW (reprint author), Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan. Bauer, GEW (reprint author), Tohoku Univ, CSRN, Sendai, Miyagi 9808577, Japan. |
Keywords | PERPENDICULAR MAGNETIC-ANISOTROPY ELECTRIC-FIELD CONTROL FERROMAGNETIC SEMICONDUCTOR TUNNELING MAGNETORESISTANCE GRANULAR FERROMAGNETS ROOM-TEMPERATURE EXCHANGE LIQUID ALLOYS MOMENT |
Issue Date | 2018 |
Publisher | PHYSICAL REVIEW B |
Citation | PHYSICAL REVIEW B. 2018, 98(13). |
Abstract | We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator vertical bar platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets. |
URI | http://hdl.handle.net/20.500.11897/528360 |
ISSN | 2469-9950 |
DOI | 10.1103/PhysRevB.98.134402 |
Indexed | SCI(E) |
Appears in Collections: | 人工微结构和介观物理国家重点实验室 |