Title Gate-controlled magnetoresistance of a paramagnetic-insulator vertical bar platinum interface
Authors Liang, L.
Shan, J.
Chen, Q. H.
Lu, J. M.
Blake, R.
Palstra, T. T. M.
Bauer, G. E. W.
van Wees, B. J.
Ye, J. T.
Affiliation Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands.
Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan.
Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan.
Tohoku Univ, CSRN, Sendai, Miyagi 9808577, Japan.
Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.
Univ Twente, Coll Bestuur, NL-7500 AE Enschede, Netherlands.
Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands.
Bauer, GEW (reprint author), Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan.
Bauer, GEW (reprint author), Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan.
Bauer, GEW (reprint author), Tohoku Univ, CSRN, Sendai, Miyagi 9808577, Japan.
Keywords PERPENDICULAR MAGNETIC-ANISOTROPY
ELECTRIC-FIELD CONTROL
FERROMAGNETIC SEMICONDUCTOR
TUNNELING MAGNETORESISTANCE
GRANULAR FERROMAGNETS
ROOM-TEMPERATURE
EXCHANGE
LIQUID
ALLOYS
MOMENT
Issue Date 2018
Publisher PHYSICAL REVIEW B
Citation PHYSICAL REVIEW B. 2018, 98(13).
Abstract We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator vertical bar platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.
URI http://hdl.handle.net/20.500.11897/528360
ISSN 2469-9950
DOI 10.1103/PhysRevB.98.134402
Indexed SCI(E)
Appears in Collections: 人工微结构和介观物理国家重点实验室

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