| Title | High-electron-mobility InN epilayers grown on silicon substrate |
| Authors | Liu, Huapeng Wang, Xinqiang Chen, Zhaoying Zheng, Xiantong Wang, Ping Sheng, Bowen Wang, Tao Rong, Xin Li, Mo Zhang, Jian Yang, Xuelin Xu, Fujun Ge, Weikun Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Microsyst & Terahertz Res Ctr, 596 Yinhe Rd, Chengdu 610200, Sichuan, Peoples R China. Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Wang, XQ (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | MOLECULAR-BEAM EPITAXY N-TYPE CONDUCTIVITY WURTZITE INN UNDOPED INN ALN BUFFER FILMS GAN SI(111) LAYER TEMPERATURE |
| Issue Date | 2018 |
| Publisher | APPLIED PHYSICS LETTERS |
| Citation | APPLIED PHYSICS LETTERS. 2018, 112(16). |
| Abstract | High-electron-mobility InN epilayers are achieved under the extremely In-rich condition on Si (111) substrates by molecular beam epitaxy. A directly probed electron mobility of 3640 cm 2 V-1 s(-1) and a residual electron concentration of 2.96 x 10(17) cm(-3) are detected by Hall-effect measurements at room temperature, which corresponds to a remarkable mobility of 3970 cm(2) V-1 s(-1) and an electron concentration of 2.45 x 10(17) cm(-3) in the InN bulk layer taking into account the electron accumulation layers with a density of 5.83 x 10(13) cm(-2) and a mobility of 429 cm(2)/V s. It is found that extremely the In-rich growth condition is most likely favorable to suppress impurity incorporation and weaken the dislocation scattering due to low proportionally charged dislocations, hence leading to high electron mobility. Published by AIP Publishing. |
| URI | http://hdl.handle.net/20.500.11897/524293 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.5017153 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
