Title | Visualizing grain boundaries in monolayer MoSe2 using mild H2O vapor etching |
Authors | Wang, Jinhuan Xu, Xiaozhi Qiao, Ruixi Liang, Jing Liu, Can Zheng, Bohao Liu, Lei Gao, Peng Jiao, Qingze Yu, Dapeng Zhao, Yun Liu, Kaihui |
Affiliation | Beijing Inst Technol, Sch Chem & Chem Engn, Beijing 100081, Peoples R China. Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China. South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Beijing Inst Technol, Sch Chem & Chem Engn, Beijing 100081, Peoples R China. Liu, KH (reprint author), Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Liu, KH (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
Keywords | MoSe2 grain boundary hot water vapor single crystal TRANSITION-METAL DICHALCOGENIDES ULTRATHIN 2-DIMENSIONAL NANOMATERIALS MOLYBDENUM-DISULFIDE TUNGSTEN DISULFIDE VALLEY POLARIZATION CARBON NANOTUBES GRAPHENE GROWTH CRYSTAL HETEROSTRUCTURES |
Issue Date | 2018 |
Publisher | NANO RESEARCH |
Citation | NANO RESEARCH. 2018, 11(8), 4082-4089. |
Abstract | Beyond graphene, two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention owing to their potential in next-generation nanoelectronics and optoelectronics. Nevertheless, grain boundaries are ubiquitous in large-area as-grown TMD materials and would significantly affect their band structure, electrical transport, and optical properties. Therefore, the characterization of grain boundaries is essential for engineering the properties and optimizing the growth in TMD materials. Although the existence of boundaries can be measured using scanning tunneling microscopy, transmission electron microscopy, or nonlinear optical microscopy, a universal, convenient, and accurate method to detect boundaries with a twist angle over a large scale is still lacking. Herein, we report a high-throughput method using mild hot H2O etching to visualize grain boundaries of TMDs under an optical microscope, while ensuring that the method is nearly noninvasive to grain domains. This technique utilizes the reactivity difference between stable grain domains and defective grain boundaries and the mild etching capacity of hot water vapor. As grain boundaries of two domains with twist angles have defective lines, this method enables to visualize all types of grain boundaries unambiguously. Moreover, the characterization is based on an optical microscope and therefore naturally of a large scale. We further demonstrate the successful application of this method to other TMD materials such as MoS2 and WSe2. Our technique facilitates the large-area characterization of grain boundaries and will accelerate the controllable growth of large single-crystal TMDs. |
URI | http://hdl.handle.net/20.500.11897/518020 |
ISSN | 1998-0124 |
DOI | 10.1007/s12274-018-1991-2 |
Indexed | SCI(E) EI |
Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 工学院 |