| Title | High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy |
| Authors | Wang, Tao Wang, Xinqiang Chen, Zhaoying Sun, Xiaoxiao Wang, Ping Zheng, Xiantong Rong, Xin Yang, Liuyun Guo, Weiwei Wang, Ding Cheng, Jianpeng Lin, Xi Li, Peng Li, Jun He, Xin Zhang, Qiang Li, Mo Zhang, Jian Yang, Xuelin Xu, Fujun Ge, Weikun Zhang, Xixiang Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China. Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Zhang, XX (reprint author), King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. Wang, XQ Shen, B (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | 2D electron gas InGaN/InN molecular beam epitaxy PIEZOELECTRIC POLARIZATION ALGAN/GAN HETEROSTRUCTURES INN HEMTS HETEROJUNCTION SEMICONDUCTORS GRAPHENE DEVICES STATE |
| Issue Date | 2018 |
| Publisher | ADVANCED SCIENCE |
| Citation | ADVANCED SCIENCE. 2018, 5(9). |
| Abstract | Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 x 10(3) cm(2) V-1 s(-1) and 2.14 x 10(13) cm(-2), respectively, including contribution from the InN bottom layer. The Shubnikov-de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 x 10(12) cm(-2) and a quantum mobility of 1.48 x 10(3) cm(2) V-1 s(-1). The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel. |
| URI | http://hdl.handle.net/20.500.11897/517585 |
| ISSN | 2198-3844 |
| DOI | 10.1002/advs.201800844 |
| Indexed | SCI(E) EI PubMed Medline |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
