| Title | Terahertz probe of photoexcited carrier dynamics in the Dirac semimetal Cd3As2 |
| Authors | Lu, Wei Ling, Jiwei Xiu, Faxian Sun, Dong |
| Affiliation | Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China. Fudan Univ, State Key Lab Surface Phys, Shanghai, Peoples R China. Fudan Univ, Dept Phys, Shanghai, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China. Sun, D (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | POLAR SEMICONDUCTORS ELECTRON GRAPHENE MAGNETORESISTANCE RAMAN SPECTROSCOPY TEMPERATURE GENERATION EXCITATION |
| Issue Date | 2018 |
| Publisher | PHYSICAL REVIEW B |
| Citation | PHYSICAL REVIEW B. 2018, 98(10). |
| Abstract | The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals is vital towards their application in high-performance electronic and optoelectronic devices. In this work, the relaxation dynamics of photoexcited carriers of 3D Dirac semimetal Cd3As2 is investigated by transient terahertz spectroscopy. The visible pump-THz probe spectroscopy measurement shows clear biexponential decays with two characteristic time constants. According to the pump-power and temperature dependence, these two characteristic time constants are attributed to the electron-phonon coupling (1-4 ps) and anharmonic decay of hot coupled phonons to electronic uncoupled phonons (2-9 ps), respectively. An anomalous electron-optical phonon coupling reduction and a bottleneck slowing of hot optical phonon relaxation are observed with higher excitation intensities similar to that in graphene. On the other hand, the electron-optical phonon coupling can be enhanced due to the phonon frequency broadening and softening at elevated lattice temperature. Furthermore, the transient THz spectrum response is strongly modified by the phonon assisted intraband absorption of hot carriers from a pure electronic Drude model, which is evidenced by a characteristic THz absorption dip in the transient THz absorption spectrum. This absorption dip is pinned by the mixing of discrete optical phonon energies that assist the intraband transition enabled by photoexcitation of hot carriers. |
| URI | http://hdl.handle.net/20.500.11897/517205 |
| ISSN | 2469-9950 |
| DOI | 10.1103/PhysRevB.98.104310 |
| Indexed | SCI(E) |
| Appears in Collections: | 量子材料科学中心 |
