| Title | Significant Enhancement of Single-Walled Carbon Nanotube Based Infrared Photodetector Using PbS Quantum Dots |
| Authors | Tang, Yicheng Fang, Hehai Long, Mingsheng Chen, Gang Zheng, Zhe Zhang, Jin Zhou, Wenjia Ning, Zhijun Zhu, Zhihong Feng, Ying Qin, Shigiao Chen, Xiaoshuang Lu, Wei Hu, Weida |
| Affiliation | Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China. Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China. Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China. Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China. |
| Keywords | Carbon nanotubes infrared photodetector photogating effect quantum dots ROOM-TEMPERATURE FABRICATION DETECTORS PHOTOTRANSISTORS HETEROSTRUCTURE PHOTORESPONSE |
| Issue Date | 2018 |
| Publisher | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS |
| Citation | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 2018, 24(4). |
| Abstract | We show that the performance of single walled carbon nanotubes (SWCNTs) based infrared photodetector can be greatly enhanced through the combination with colloidal PbS quantum dots (QDs). To improve the photo-induced charge transport efficiency and the carrier mobility, the colloidal PbS QDs are modified by short-chain inorganic. Under illumination, the light-induced electron-hole pairs can he effectively separated by the internal electric field formed at the interfaces between SWCNTS and PbS QDs, which will lead to the increase of both conductivities in them. Photocurrent is formed under the driving of source-drain voltage (V-ds) applied by the interdigital finger electrodes. Our hybrid phototransistor achieves a responsivity of 7.2 A/W, a specific detectivity (defined below) of 7.1 x 10(10) Jones, and a response time of 1.58 ms at the same time under 1550-nm illumination with low intensity. Through gate voltage tuning, the responsivity can be increased to 353.4 A/W. In addition, our hybrid phototransistor is stable, low-cost, and compatible with complementary metal oxide semiconductor, which benefits a lot in real applications. |
| URI | http://hdl.handle.net/20.500.11897/516950 |
| ISSN | 1077-260X |
| DOI | 10.1109/JSTQE.2018.2819904 |
| Indexed | SCI(E) EI |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ |
