| Title | Direct synthesis of high-quality nitrogen-doped graphene via ion implantation |
| Authors | Zhao, Yunbiao Wang, Xu Fu, Engang Han, Dong Wang, Peipei Wu, Zaoming Chen, Yi Chen, Yuhan Zhao, Ziqiang |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China. China Acad Engn Phys, Inst Mat, Jiangyou 621908, Peoples R China. |
| Keywords | RAMAN-SPECTROSCOPY SILICON-CARBIDE ELECTRICAL-PROPERTIES MONOLAYER GRAPHENE SIC MICROSPHERES CARBON GROWTH DEFECTS SUBSTRATE TRANSPORT |
| Issue Date | 2018 |
| Publisher | CARBON |
| Citation | CARBON. 2018, 139, 732-739. |
| Abstract | Synthesis of nitrogen-doped graphene (NG) is of great importance and conventional synthesis methods still remain huge challenges due to uncontrollable nitrogen doping content and complicated experimental procedure. In this study, a promising approach for synthesis of high-quality NG via nitrogen ion implantation compatible with the current microelectronic industry is reported. By nitrogen ion implantation into a newly designed multilayered substrate (Ni/Cu/amorphous-SiC/SiO2/Si), high-quality NG can be directly grown on the metal surface after a one-step rapid thermal processing. A detailed growth model of NG based on the design of multilayered substrate, the low energy ion implantation and the formation of Cu-Ni alloy with composition gradient is established. The ion implantation approach could open up a new pathway for doping graphene, as well as shed light on versatile and potential applications of doping other 2D materials. (C) 2018 Elsevier Ltd. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/516905 |
| ISSN | 0008-6223 |
| DOI | 10.1016/j.carbon.2018.06.063 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 核物理与核技术国家重点实验室 |
