| Title | Modeling Disorder Effect of the Oxygen Vacancy Distribution in Filamentary Analog RRAM for Neuromorphic Computing |
| Authors | Gao, Bin Wu, Huaqiang Wu, Wei Wang, Xiaohu Yao, Peng Xi, Yue Zhang, Wenqiang Deng, Ning Huang, Peng Liu, Xiaoyan Kang, Jinfeng Chen, Hong-Yu Yu, Shimeng Qian, He |
| Affiliation | Tsinghua Univ, Inst Microelect, Beijing, Peoples R China. Peking Univ, Beijing, Peoples R China. GigaDevice Semicond Inc, Beijing, Peoples R China. Arizona State Univ, Tempe, AZ USA. |
| Keywords | MEMORY |
| Issue Date | 2017 |
| Publisher | 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
| Citation | 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). 2017. |
| Abstract | Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Ov to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on 1kb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided. |
| URI | http://hdl.handle.net/20.500.11897/512035 |
| ISSN | 2380-9248 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 待认领 |
