| Title | MXene-Silicon Van Der Waals Heterostructures for High-Speed Self-Driven Photodetectors |
| Authors | Kang, Zhe Ma, Yanan Tan, Xinyu Zhu, Miao Zheng, Zhi Liu, Nishuang Li, Luying Zou, Zhengguang Jiang, Xueliang Zhai, Tianyou Gao, Yihua |
| Affiliation | HUST, CNCD, WNLO, Sch Phys, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China. HUST, Sch Mat Sci & Engn, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China. China Three Gorges Univ, Coll Mat & Chem Engn, 8 Daxue Rd, Yichang 443002, Peoples R China. Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China. Guilin Univ Technol, Guangxi Nonferrous Met Mineral & Mat Collaborat I, Sch Mat Sci & Engn, Jiangan Rd 12, Guilin 541004, Peoples R China. Wuhan Inst Technol, Sch Mat Sci & Engn, Xiongchu St 693, Wuhan 430073, Hubei, Peoples R China. HUST, CNCD, WNLO, Sch Phys, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China. Zhai, TY Gao, YH (reprint author), HUST, Sch Mat Sci & Engn, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China. |
| Keywords | MXenes photodetectors Schottky junctions Ti3C2TX/n-Si 2-DIMENSIONAL TITANIUM CARBIDE TRANSITION-METAL CARBIDES HIGH VOLUMETRIC CAPACITANCE HETEROJUNCTION SOLAR-CELLS TRANSPARENT CONDUCTORS CATION INTERCALATION SCHOTTKY JUNCTION GRAPHENE 2D ELECTRODES |
| Issue Date | 2017 |
| Publisher | ADVANCED ELECTRONIC MATERIALS |
| Citation | ADVANCED ELECTRONIC MATERIALS. 2017, 3(9). |
| Abstract | MXenes, or transition metal carbides or nitrides, as an advanced 2D materials have already attracted extensive attention due to their high conductivity and large specific surface area for applications in the field of energy storage. MXenes also have many other advanced properties such as good transmittance and adjustable work function over a large range. However, few works study the properties of MXenes in the field of optoelectronics. Here, the optoelectronic properties of Ti3C2TX (with a work function of 4.37 eV) on n-type silicon (n-Si) of vertical van der Waals heterostructures are studied. The Ti3C2TX not only functions as the transparent electrode but also contributes to the separation and transport of photo-induced carriers. After investigations on the influence of annealing, temperature, illumination, and applied voltage on the performance of Ti3C2TX/n-Si Schottky junction heterostructures, this study fabricates a self-driven vertical junction photodetectors with high response and recovery speeds. It is believed that the excellent photoelectric properties of MXenes will attract many researchers' attention to the application of MXenes in the photoelectrical field. |
| URI | http://hdl.handle.net/20.500.11897/501103 |
| ISSN | 2199-160X |
| DOI | 10.1002/aelm.201700165 |
| Indexed | SCI(E) |
| Appears in Collections: | 新材料学院 |
