| Title | Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN |
| Authors | Sun, Xiaoxiao Wang, Xinqiang Wang, Ping Wang, Tao Sheng, Bowen Zheng, Xiantong Li, Mo Zhang, Jian Yang, Xuelin Xu, Fujun Ge, Weikun Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Microsyst & Terahertz Res Ctr, 596 Yinhe Rd, Chengdu 610200, Sichuan, Peoples R China. Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Wang, XQ (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | SINGLE-PHOTON SOURCE MOLECULAR-BEAM EPITAXY EMISSION NANOWIRES DRIVEN |
| Issue Date | 2017 |
| Publisher | OPTICS EXPRESS |
| Citation | OPTICS EXPRESS. 2017, 25(24), 30664-30671. |
| Abstract | Intense emission from an InGaN quantum disc (QDisc) embedded in a GaN nanowire p-n junction is directly resolved by performing cathodoluminescence spectroscopy. The luminescence observed from the p-type GaN region is exclusively dominated by the emission at 380 nm, which has been usually reported as the emission from Mg induced impurity bands. Here, we confirm that the robust emission from 380 nm is actually not due to the Mg induced impurity bands, but rather due to being the recombination between electrons in the QDisc and holes in the p-type GaN. This identification helps to get a better understanding of the confused luminescence from nanowires with thin QDiscs embedded for fabricating electrically driven single photon emitters. (C) 2017 Optical Society of America |
| URI | http://hdl.handle.net/20.500.11897/500776 |
| ISSN | 1094-4087 |
| DOI | 10.1364/OE.25.030664 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
